Toshiba Semiconductor and Storage RN4985,LF(CT

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Part Number:	RN4985,LF(CT
Manufacturer:	Toshiba Semiconductor and Storage
Description:	TRANS NPN/PNP PREBIAS 0.2W US6
Category:	Discrete Semiconductor Products
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
	Learn more about Toshiba Semiconductor and Storage RN4985,LF(CT
	RN4985

Specifications

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:US6
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):2.2 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:RN4985(T5L,F,T)
RN4985(T5LFT)TR
RN4985(T5LFT)TR-ND
RN4985,LF(CB
RN4985LF(CBTR
RN4985LF(CBTR-ND
RN4985LF(CT
RN4985LF(CTTR
RN4985T5LFT
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz, 200MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Current - Collector Cutoff (Max):100µA (ICBO)
Current - Collector (Ic) (Max):100mA

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