Toshiba Semiconductor and Storage TPN4R303NL,L1Q

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Part Number:TPN4R303NL,L1Q
Manufacturer:Toshiba Semiconductor and Storage
Description:MOSFET N-CH 30V 63A 8TSON
Category:Discrete Semiconductor Products
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Learn more about Toshiba Semiconductor and Storage TPN4R303NL,L1Q
TPN4R303NL
  • Specifications
  • Vgs(th) (Max) @ Id:2.3V @ 200µA
  • Vgs (Max):±20V
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:8-TSON Advance (3.3x3.3)
  • Series:U-MOSVIII-H
  • Rds On (Max) @ Id, Vgs:4.3 mOhm @ 20A, 10V
  • Power Dissipation (Max):700mW (Ta), 34W (Tc)
  • Packaging:Cut Tape (CT)
  • Package / Case:8-PowerVDFN
  • Other Names:TPN4R303NLL1QCT
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Lead Free Status / RoHS Status:Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs:14.8nC @ 10V
  • FET Type:N-Channel
  • FET Feature:-
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Drain to Source Voltage (Vdss):30V
  • Detailed Description:N-Channel 30V 40A (Tc) 700mW (Ta), 34W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
  • Current - Continuous Drain (Id) @ 25°C:40A (Tc)

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