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IXYS Corporation IXFH7N100P

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Part Number:IXFH7N100P
Manufacturer:IXYS Corporation
Description:MOSFET N-CH
Category:Discrete Semiconductor Products
Lead Free Status / RoHS Status:
Learn more about IXYS Corporation IXFH7N100P
IXF(A,P)7N100P
  • Specifications
  • Vgs(th) (Max) @ Id:6V @ 1mA
  • Vgs (Max):±30V
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-247
  • Series:HiPerFET™, Polar™
  • Rds On (Max) @ Id, Vgs:1.9 Ohm @ 3.5A, 10V
  • Power Dissipation (Max):300W (Tc)
  • Package / Case:TO-247-3
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Manufacturer Standard Lead Time:24 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds:2590pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:47nC @ 10V
  • FET Type:N-Channel
  • FET Feature:-
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Drain to Source Voltage (Vdss):1000V
  • Detailed Description:N-Channel 1000V 7A (Tc) 300W (Tc) Through Hole TO-247
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)

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