Toshiba Semiconductor and Storage RN1606(TE85L,F)

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Part Number:RN1606(TE85L,F)
Manufacturer:Toshiba Semiconductor and Storage
Description:TRANS 2NPN PREBIAS 0.3W SM6
Category:Discrete Semiconductor Products
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Learn more about Toshiba Semiconductor and Storage RN1606(TE85L,F)
RN1601-06
  • Specifications
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Supplier Device Package:SM6
  • Series:-
  • Resistor - Emitter Base (R2):47 kOhms
  • Resistor - Base (R1):4.7 kOhms
  • Power - Max:300mW
  • Packaging:Cut Tape (CT)
  • Package / Case:SC-74, SOT-457
  • Other Names:RN1606(TE85LF)CT
  • Mounting Type:Surface Mount
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Lead Free Status / RoHS Status:Lead free / RoHS Compliant
  • Frequency - Transition:250MHz
  • Detailed Description:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Current - Collector (Ic) (Max):100mA

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