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Toshiba Semiconductor and Storage RN1118(T5L,F,T)
Lmages are for reference only See Product Specitications
| Part Number: | RN1118(T5L,F,T) |
|---|---|
| Manufacturer: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.1W SSM |
| Category: | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Learn more about Toshiba Semiconductor and Storage RN1118(T5L,F,T) | |
| RN1114,5,6,7,8 |
- Specifications
- Voltage - Collector Emitter Breakdown (Max):50V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
- Transistor Type:NPN - Pre-Biased
- Supplier Device Package:SSM
- Series:-
- Resistor - Emitter Base (R2):10 kOhms
- Resistor - Base (R1):47 kOhms
- Power - Max:100mW
- Packaging:Tape & Reel (TR)
- Package / Case:SC-75, SOT-416
- Other Names:RN1118(T5LFT)TR
RN1118T5LFT - Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Frequency - Transition:250MHz
- Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
- DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
- Current - Collector Cutoff (Max):500nA
- Current - Collector (Ic) (Max):100mA
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