IXYS Corporation IXFA10N60P

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Part Number:IXFA10N60P
Manufacturer:IXYS Corporation
Description:MOSFET N-CH 600V 10A D2-PAK
Category:Discrete Semiconductor Products
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Learn more about IXYS Corporation IXFA10N60P
IXF(A,P)10N60P
  • Specifications
  • Vgs(th) (Max) @ Id:5.5V @ 1mA
  • Vgs (Max):±30V
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-263 (IXFA)
  • Series:HiPerFET™, PolarP2™
  • Rds On (Max) @ Id, Vgs:740 mOhm @ 5A, 10V
  • Power Dissipation (Max):200W (Tc)
  • Packaging:Tube
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Manufacturer Standard Lead Time:24 Weeks
  • Lead Free Status / RoHS Status:Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds:1610pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
  • FET Type:N-Channel
  • FET Feature:-
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Drain to Source Voltage (Vdss):600V
  • Detailed Description:N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)

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