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Global Power Technologies Group GP2M009A090NG

GP2M009A090NG

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Part Number:GP2M009A090NG
Manufacturer:Global Power Technologies Group
Description:MOSFET N-CH 900V 9A TO3PN
Category:Discrete Semiconductor Products
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Learn more about Global Power Technologies Group GP2M009A090NG
GP2M009A090NG
  • Specifications
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Vgs (Max):±30V
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-3PN
  • Series:-
  • Rds On (Max) @ Id, Vgs:1.4 Ohm @ 4.5A, 10V
  • Power Dissipation (Max):312W (Tc)
  • Packaging:Tape & Reel (TR)
  • Package / Case:TO-3P-3, SC-65-3
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Lead Free Status / RoHS Status:Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds:2740pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V
  • FET Type:N-Channel
  • FET Feature:-
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Drain to Source Voltage (Vdss):900V
  • Detailed Description:N-Channel 900V 9A (Tc) 312W (Tc) Through Hole TO-3PN
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)

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